What are the major differences between the collector characteristics of a BJT transistor and thedrain characteristics of a JFET transistor? Compare the units of each axis and the controllingvariable. How does IC react to increasing levels of IB versus changes in ID to increasingly negativevalues of VGS? How does the spacing between steps of IB compare to the spacing betweensteps of VGS? Compare VCsat to VP in defining the nonlinear region at low levels of output voltage ur question here...