Discuss the below in detail:
Q: For the base-current-compensated mirror of Fig let the three transistors be matched and specified to have a collector current of 1 mA at VBE = 0.7 V. For IREF of 100 μA and assuming β = 100, what will the voltage at node x be? If IREF is increased to 1 mA, what is the change in Vx? What is the value of IO obtained with VO = Vx in both cases? Give the percentage difference between the actual and ideal value of IO. What is the lowest voltage at the output for which proper current-source operation is maintained?
