1. High-pressure oxidation (HIPOX) increases oxidation rates. Data for dry oxidation at 900 ?C is given below. Data from Lie, L.N. et al: J. Electrochem. Soc., 129 (1982), 2828.
How does your simulator handle HIPOX oxides?
2. What is the segregation behaviour of the n-type dopants As, P and Sb?