Given an NMOS with gate dielectric thickness Tox = 120A° (SiO2), effective channel mobility µe f f = 1000cm2v-1s-1,channel length L = 15µm, channel width W = 150µm, Si substrate doping NA = 4E16cm-3. Assume Vf b = 0.
(A). Calculate VT .
(B). Create a plot of ID vs VD at various VG levels. For the purpose of practice, please use a plotting softwarefor this part. You can use piecewise functions given by Eqn. 6-49 and Eqn. 6-53 as you go from linear regioninto saturation region.
(C). Calculate the drain saturation current IDSAT at VG = 3V.
(D). Calculate the saturation transconductance gmSAT at VG = 3V.