Find the impurity concentrations necessary to dope the
Find the impurity concentrations necessary to dope the polysilicon gate so that the surface is flat-banded. VS=0, intrinsic, VS=VF, and at the threshold, VS=2VF.
The last is known as the zero threshold device but a more correct design is VS = VF.
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find the impurity concentrations necessary to dope the polysilicon gate so that the surface is flat-banded vs0
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