Discuss the below problem:
Q: An NMOS transistor fabricated in a certain process is found to have an intrinsic gain of 50 V/V when operated at an ID of 100 μA. Find the intrinsic gain for ID = 25 μA and ID = 400 μA. For each of these currents, find the factor by which gm changes from its value at ID = 100 μA.