1. Estimate relative errors in the calculation of free carriers concentration when the Maxwell-Boltzman n statistics is applied for semiconductors with Ferm i energy wi thin the energy gap, if the Fenni level is 3kbT, 2k1,T, k,,T away from the bandgap edge or if it coincides with the edge. Use the given table of the exact value of the Fcnni integral (F112) for the companson.
2. Calculate the intrinsic carrier concentrations for Si, Ge, GaAs, and GaN at 300 K, in the non-degenerate case. Plot thei revolution as a function of temperature, in logarithmic scale.