1. Explain the possible advantages of a p-i-n photodiode over an abrupt pn desi gn.
2. Describe the quantum selection rule as it pertains to n-type QWIP devices. How do conventional QWIP devices overcome this limitation? Can you list some more novel solutions to avoid this specific selection rule?
3. Using knowledge gained from Chapter 16, describe the vanous processing steps that must be added to the conventional detector fabrication steps m order to generate a focal plane array. Assume pitch of 28 µm, InSb FPA with 640x 320 pixels and Si ROlC. What arc some of the complications added i n the FPA hybridization process?