Response to the following problem:
Two transistors have EBJ areas as follows: AE1 = 200 μm × 200 μm and AE 2 = 0.4 μm × 0.4 μm. If the two transistors are operated in the active mode and conduct equal collector currents, what do you expect the difference in their vBE values to be?
Make sure you use enough details to support your answer.