A semiconductor, in thermal equilibrium, has a hole concentration of p0 = 2x10^16 cm^-3. The minority carrier life time = 3x10^-7 s. (Assume, ni = 10^10 cm^-3)
(a) Determine the thermal equilibrium recombination rate of electrons.
(b) Determine the recombination rate of electrons if an excess electron concentration of delta(n) = 10^13 cm^-3 exists.
(c) Calculate the change in the recombination rate when excess electron concentration exists (compared to thermal equilibrium).