1. Show that it is possible to have a higher electron conductivity than hole conductivity in a p-type Si. P-type is defined by P>N. This is again impractical and gives false impression for the same reason as above.
2. A silicon is to be doped homogeneously by donor and acceptor impurities to make the electron and hole conductivities equal at room temperature which never happens In practice. Should the SI be doped with a group-III acceptor or group-V donor?
Determine the required concentration of the donor and the acceptor Impurities, assuming that all the impurities are ionized, I e., each donor gives one electron and each acceptor gives one hole. Use the mobility curves In given Figure or formulae In Table.
