Problem
1. Using the Deal-Grove model, determine dry oxidation times required to produce 100 nm of oxide on a bare silicon wafer at temperatures of 920, 1000, and 1100oC.
2. Using the Deal-Grove model, determine the wet and dry oxidation times needed to grow 0.5µm of oxide on a bare silicon wafer at 1000oC.
The response should include a reference list. Double-space, using Times New Roman 12 pnt font, one-inch margins, and APA style of writing and citations.