design an n-channel silicon JFET with pinch off voltage (-2V). The channel is doped with Arsenic and the gate is doped with Boron. the Boron density is 1019 atoms /cm-3 all atoms are fully ionized. The resistance of the channel at zero gate bias is equal to 0.15 Ω.
assume one-sided junction model and assume an ideal JFET( Rs=0,RD=0, full depletion, Long channel) for the derivation parameters.
a)determine channel thickness, width, length, doping densities, the carrier mobility, built-in-potential, and turn off voltage (VT), by knowing the design obtained must be reasonable and feasiable for JFET fabrication.
b) calculate IDsat and VDsat for VG (v) at 0,-0.5,-1.5,-2.0, and at VT
c)calculate trans-conductance in saturation region for values of VG =0,-0.5,-1.5,-2.0, and VT
d) Graph current ID as function of VD using matlab ( sweeping VD from 0 to VDsat ) for values of VG 's and VT.