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Deposit aluminum with a deposition rate of 100 nmmin the

deposit Aluminum with a deposition rate of 100 nm/min. The substrate temperature is 300K. During the deposition, your chamber has an air leak that provides a residual O2 partial pressure of 10-6 Torr. Assuming a sticking coefficient of 1 for oxygen on Al, what will be the oxygen content of your deposited Al film in atomic %? Take the density of Al to be 6.02.1022 cm-3.

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Electrical Engineering: Deposit aluminum with a deposition rate of 100 nmmin the

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Electrical Engineering: Deposit aluminum with a deposition rate of 100 nmmin the

Reference No:- TGS0592576

Have a Question? (oR Write a Review)

Recent Questions Asked Electrical Engineering

Q : Assuming that the secondary is open-circuited and that the

Q : The rate constant for a certain chemical reaction is 00125

Q : A 200 nm oxide film is deposited on a 500 m thick bare

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Request for Solution File

Ask an Expert for Answer!!

Electrical Engineering: Deposit aluminum with a deposition rate of 100 nmmin the

Reference No:- TGS0592576

Recent Questions Asked Electrical Engineering

Q : Assuming that the secondary is open-circuited and that the

Q : The rate constant for a certain chemical reaction is 00125

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Q : Deposit aluminum with a deposition rate of 100 nmmin the

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