From the high-frequency C- V measurements on an MOS capacitor with P-Si substrate performed at 300 K. the following characteristics were deduced:
![197_2552488d-5836-44bb-845b-93dabfaaf1fc.png](https://secure.tutorsglobe.com/CMSImages/197_2552488d-5836-44bb-845b-93dabfaaf1fc.png)
Construct the C-V curve. labeling everything. including the values of the oxide capacitance, fl at-band voltage. and threshold volt age. Assuming an Al gate with 4. 1 V work function. compute the effective oxide charge.