Consider two Si samples; one is p-type doped to 1018/cm3 acceptor atoms and the other one n-type doped to 1015/cm3 donor atoms at room temperature (300K).
a. Draw the band diagram associated with p-type and n-type semiconductors, noting the various important energy levels
b. Articulate the difference, using band diagrams, between forward and reversed biased junctions.
c. Now, consider a Schottky junction diode between Al and n-Si, doped with 5 × 1016 donors cm?3. Given that the electron affinity ? of Si is 4.01 eV and the work function of Al is 4.28 eV, what is the theoretical barrier height ?B from the metal to the semiconductor?