Consider mos transistors fabricated in a 65-nm process for

Question

Consider MOS transistors fabricated in a 65-nm process for which μnCox = 470 μA/V2, μpCox = 190 μA/V2, Vtn =-Vtp = 0.35 V, and VDD =1 V.

(a) Find Ron of an NMOS transistor with W/L = 1.5.

(b) Find Ron of a PMOS transistor with W/L = 1.5.

(c) If Ron of the PMOS device is to be equal to that of the NMOS device in (a), what must (W/L)p be?