Consider a schottky diode at t300 k that is formed with pt, Electrical Engineering

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Consider a schottky diode at t300 k that is formed with pt

Consider a Schottky diode at T=300 K that is formed with Pt qφM=5.3ev 'work function' on n-type silicon.knowing that qX for silicon =4.05ev
(a) find the barrier height.

(b) Calculate the saturation current.

(d) What is the change in forward bias voltage necessary to double the current density?

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Electrical Engineering: Consider a schottky diode at t300 k that is formed with pt

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Electrical Engineering: Consider a schottky diode at t300 k that is formed with pt

Reference No:- TGS0609821

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Electrical Engineering: Consider a schottky diode at t300 k that is formed with pt

Reference No:- TGS0609821

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