Consider a region of p-type semiconductor with length L << the minority carrier diffusion length. At x=0, an excess minority carrier density of Änp0 is injected. A contact at x=L can extract excess minority carriers reaching this point, with a surface recombination velocity of sg.
a) Find an expression for Änp (x). Your solution should clearly show each major step.
b) Find an expression for the diffusion current density at x=0, Jn(0).