Consider a p-n junction at 290 K with ?εgap = 1.1 eV. The Fermi level lies 0.2 eV from the valence and conduction band edges on the p- and n-sides, respectively.
(a) What is the band displacement, ?εc or ?εv, across the junction?
(b) What are the charge carrier densities, n h and ne, on the p-side?
(c) What are the charge carrier densities on the n-side?
(d) What are the answers to part (b) at a temperature of 320 K?