Channel length of nMos, Ln = 0.6 µm
Channel length of pMos, Lp = 0.6 µm
βn= 122 µA/V2
βp= 61 µA/V2
Capacitance of oxide, Cox = 25x10-4 pF/µm2
Threshold Voltage of nMOS, VTN = 0.7V
Threshold Voltage of pMOS, VTP =-0.7V
(see the file attached for the diagram)
What is the corresponding W of the pMOS device if the gate is to have symmetrical delay characteristics.