A GaAs MESFET has a 0.2 µm thick N-channel doped to Nd = 1017 cm-3. Assume that
(c) Can any gate voltage of the opposite sign to (b) be applied to the gate without producing expression gate current? What is its effect on W depand Ids?
(d) What needs to be done to redesign this MESFET so that its channel is cut off at Vg = 0 and the channel only conducts current at Vg larger than a threshold voltage?