Can any gate voltage of the opposite sign to b be applied, Chemistry

Can any gate voltage of the opposite sign to b be applied

A GaAs MESFET has a 0.2 µm thick N-channel doped to N_d = 10¹⁷ cm^-3. Assume that

(c) Can any gate voltage of the opposite sign to (b) be applied to the gate without producing expression gate current? What is its effect on W depand Ids?

(d) What needs to be done to redesign this MESFET so that its channel is cut off at Vg = 0 and the channel only conducts current at V_g larger than a threshold voltage?

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Chemistry: Can any gate voltage of the opposite sign to b be applied

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Chemistry: Can any gate voltage of the opposite sign to b be applied

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