Problem
1. Resistor design: How would you fabricate (a) 1 k Ω, (b) 10 k Ω resistors in a process in which minimum linewidth is 3µm?
2. Polysilicon sheet resistance is 50Ω/sq. What is polysilicon thickness?
3. The DRAM memory cell is a capacitor. If the cell area is 1µm2, with a 4 nm oxide as the capacitor dielectric, and the operating voltage is 2 V, calculate the number of electrons stored in the memory cell.
The response should include a reference list. Double-space, using Times New Roman 12 pnt font, one-inch margins, and APA style of writing and citations.