A phosphorus implant is performed into a bare p-type silicon wafer with a back-ground doping of 1 x 1015 cm-3, at an energy of 50 keV, and a dose of 1 x 1012 cm-2. After an anneal at 903°C for 10 min, the junction depth is measured to be 0.25 µm.
Calculate the enhancement in the phosphorus diffusion coefficient that was caused by the implantation damage.