A thin Silicon film is doped with Boron to a dopant density of 4 x 10^16 cm^-3.
a) What is the conductivity type (N-typeor P-type) of this film? explain briefly.
b) What are the equilibrium electron and hole concentrations at 300K and 500K? (hint: You will have to find Nc and Nv at 500K, but it isnt necessary for 300K)
c) Why does the mobile carrier concentration increase at high temperatures?