1. A metal oxide semiconductor capacitor with a p+ polysilicon gate (qΦm = 5.16eV), SiO2 dielectric thickness 100nm (εr = 3.9), and n-type substrate (ND = 6E15cm-3). Ignore interface charge (Qi = 0).
(A). Is it NMOS or PMOS? Explain.
(B). Calculate flatband voltage Vfb and sketch the band diagram at flat band. Label relevant values such as band offset and Fermi level offset.
(C). Calculate threshold voltage VT and sketch the band diagram at the onset of strong inversion (defined inEq. 6-15). Label relevant values.