Auniformly doped silicon pn junction at t 300 k with na , Electrical Engineering

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Auniformly doped silicon pn junction at t 300 k with na

A uniformly doped silicon pn junction at T = 300 K, with Na = 10¹⁸ cm^-3, is to be designed such that at a reverse-bias voltage of 10 V, the maximum electric field is limited to ε_max =10⁵ V/cm. Determine the maximum doping concentration in the n-region.

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Electrical Engineering: Auniformly doped silicon pn junction at t 300 k with na

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Electrical Engineering: Auniformly doped silicon pn junction at t 300 k with na

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