Asswne the field oxide between an n+ poly-Si wire and the p-substrate is 0.3 j.lm thick and that Na = 5El7 cm-3.
(a) What is the Vt of this field oxide device?
(b) What is the subthreshold swing, S?
(c) What is the maximum field leakage current if W = 10 µm. L = 0.3 µm, and Vdd = 2.0 V?