Assume that the gate oxide between an n poly-si gate and, Chemistry

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Assume that the gate oxide between an n poly-si gate and

Assume that the gate oxide between an n+ poly-Si gate and the p-substrate is II A thick and Na = lEI8 cm³.

(a) What is the V_I of this device?

(b) What is the subthreshold swing, S?

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Chemistry: Assume that the gate oxide between an n poly-si gate and

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Chemistry: Assume that the gate oxide between an n poly-si gate and

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