An NMOS transistor with kn = 0.4 mA/V2 and a nominal Vtn of 0.4 Vis to operate in saturation at ID =0.2 mA.
(a) If Vtn can vary by as much as ±10%, what is the expected range of ID obtained?
(b) If the transistor is used to discharge a 100-fF load capacitance, what is the expected variation in delay time, assuming that the output voltage is to change by 0.1 V?