A young designer, aiming to develop intuition concerning conductingpaths within an integrated circuit, examines the end-to-endresistance of a connecting bar 10μm long, 3μm wide, and1μm thick, made of various materials. The designer considers:
a) n-doped silicon withND=1018/cm3
b) p-doped silicon withNA=1016/cm3
c) aluminum with resistivity of 2.8μΩ*cm
Find the resistance in each case. For intrinsic silicon, usen=p=ni=1.5*1010/cm3,μn=1350, μp=480. For doped silicon,assume μn=2.5μp=1200cm2/V*s