A silicon p-n-p transistor has impurity concentrations of, Electrical Engineering

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A silicon p-n-p transistor has impurity concentrations of

A silicon p-n-p transistor has impurity concentrations of 5*10^18, 2*10^17, and 10^16 cm^-3 in the emitter, base, and collector, respectively. The base width is 1.0 um and the device cross-section area is 0.2 mm^2. When the emitter-base junction is forward biased to 0.5 V and the base-collector junction is reverse biased to 5V, calculate:
(a) The neutral base width
(b) The minority carrier concentration at the emitter-base junction

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Electrical Engineering: A silicon p-n-p transistor has impurity concentrations of

Reference No:- TGS0585361

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Recent Questions Asked Electrical Engineering

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Electrical Engineering: A silicon p-n-p transistor has impurity concentrations of

Reference No:- TGS0585361

Recent Questions Asked Electrical Engineering

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