A si is doped with 1014 boron atoms per cm3 for t300 k and


A Si is doped with 10^14 boron atoms per cm3. For T=300 K and T = 470 K. Determine the position of Ei, compute Ef-Ei, and draw a careful dimensioned energy band diagram for the Si sample. Note for Si Eg=1.1 eV, mp*/mn*=0.71. ni=10^14 cm-3 at 470 K

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Electrical Engineering: A si is doped with 1014 boron atoms per cm3 for t300 k and
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