Consider a CMOS process for which Lmin = 0.25 ?m, tox = 6 nm, n= 460 cm2/Vs, and Vt= 0.5 V.
(a) Find Cox and
(b) For an NMOS transistor with W/L = 15 m/0.25 m, calculate the values of VOV , VGS, and VDSmin needed to operate the transistor in the saturation region with a dc current ID= 0.8mA.
(c) For the device in (b), find the value of VOV and VGS required to cause the device to operate as a 500-ohm resistor for very small vDS.