Problem 1:
a) Calculate the intrinsic carrier concentration, n, at T = 200 and 400K for silicon and GaAs
b) If silicon is doped with a donor concentration of N_d = 10^16 cm^-3 , what is the position of the Fermi level at room temperature (assume all the donor atoms are ionized)
c) If the electron concentration of silicon (at room temperature) is n_0 = 3 x 10^4 cm^-3 , what is the hole concentration, p_0?
d) Is the material n- or p-type?