A calculate the equilibrium density of vacancies in a si


A) Calculate the Equilibrium density of Vacancies in a Si (Silicon) lattice at room temperature and at 200C lattice constantfor Si is 5.43A.

B) Describe how stacking faults are induced during oxidation, and the methods found which prevent their formation during oxidation?

C) Describe the difference between extrinsic and intrinsic gettering?

 

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Electrical Engineering: A calculate the equilibrium density of vacancies in a si
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