A boron diffusion into a 1 -ohm-cm n type wafer results in, Electrical Engineering

A boron diffusion into a 1 -ohm-cm n type wafer results in

A boron diffusion into a 1 -ohm-cm n type wafer results in a Gaussian profile with a surface concentration of 5 x 10^18/cm^3 and a junction depth of 4um.
a)how long did the diffusion take if the diffusion temperature was 1100 degrees C?
b)what was the sheet resistance of the layer?
c)what is the dose in the layer?

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Electrical Engineering: A boron diffusion into a 1 -ohm-cm n type wafer results in

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Request for Solution File

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Electrical Engineering: A boron diffusion into a 1 -ohm-cm n type wafer results in

Reference No:- TGS0624744

Recent Questions Asked Electrical Engineering

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