(a) An average hole velocity of 10^3 cm/sec results when 2 v is appliedaccross a 1 cm-long semiconductor bar. What is the mobilityof the bar?
(b) name the two dominant carrier scattering mechanisms innondegenerately doped semiconductors of device quality
(c) For a given semi" " the carrier mobilties inintrinsic material are (choose one: higher than, lower or same)those in heavily doped material. Explain why mobilities inintrinsic material are (chosen answer) those in heavily dopedmaterial.
(d) Tow GaAs wafers, one n-type and one p-type, areuniformily doped such that ND(wafer 1) = NA(wafer 2) >> ni. Which wafer will exhibit the larger resistivity? explain.