A 200 nm oxide film is deposited on a 500 m thick bare


A 200 nm oxide film is deposited on a 500 m thick bare silicon wafer that has a radius of curvature of 300 m. After deposition, the radius is measured to be 200 m. A 600 nm nitride film is now deposited on the oxide and the radius of curvature is measured to be 240 m. Calculate the dual film stress and the stress of the nitride film.

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Electrical Engineering: A 200 nm oxide film is deposited on a 500 m thick bare
Reference No:- TGS0592574

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