5 A JFET has Na= 10 19cm -3, Nd= 10 16cm -3, a= 0.1 µm, L= 10 µm and Z= 1 mm. Assume the device is Si with an intrinsic concentration of 10 10cm -3and a relative dielectric constant of 11.8. Assume also that in saturation the square law can be used
and that the value of ID0is 5.0 µA. Determine the following:
1. the built-in voltage;
2. the pinch-off voltage;
3. the drain saturation voltage if the gate voltage is -2 V;
4. the drain current if VD