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  Plumbicon

Introduction to Plumbicon

This picture tube has conquered several of the less favorable characteristics standard vidion. It has quick response and generates high quality pictures low light levels. Smaller size of it and light weight, jointly with low-power operating characteristics, creates it a perfect tube for transistorized television cameras.

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Apart from the target, plumb icon is very identical to the standard vidicon. Deflection and Focus are both acquired magnetically. Target of it operates efficiently as a P-I-N semiconductor diode. In tin oxide (Sn02) the internal surface of the faceplate is coated a thin transparent conductive layer. This creates a strong N type (N+) layer and acts like the signal plate of the target: On this layer's scanning side is deposited a photoconductive layer of pure lead monoxide (PbO) that is intrinsic or T type. At last the pure PbO is doped to form a P type semiconductor on that the scanning beams lands. The information of the target is displayed in the diagram. The complete thickness of the target is 15 x 10" 6 m. The 2nd diagram shows essential circuit details for developing the video signal.

The plumb icon's photo conductive target is identical to the photo conductive target in the vidicon, apart from for the method of discharging every storage element. In the standard vidicon, every element works as the leaky capacitor, along with the leakage resistance reducing with rising light intensity. Though, in the plumb icon every element acts as a capacitor in series along with a reverse biased light controlled diode. The conductive film of tin oxide (Sn02) in the signal circuit is connected to the target supply of 40 volts by an external load resistance RL to build the camera output signal voltage. Light that comes from the scene being televised is focused by the tin-oxide's transparent layer on to the photoconductive lead monoxide.

With no light the target avoids any conduction due to nonexistence of any charge carriers and thus there is little or no output current. A general value of dark current is approximately 4 nA (4 x 10-9 Amp). The incidence of light on the target causes in photo excitation of semiconductor junction among the pre PbO and doped layer. The resulting decrease in resistance results signals current flow that is proportional to the incident light on each photo element. The complete thickness of the target is 10 to .20 pm.

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