A bipolar junction diode contain a uniform cross-sectional region of 2x10-3 cm2 and a doping concentration of 1013 cm-3 in p-type and n-type both materials. Therefore diffusion properties are Dn = 5 cm2s-1, Ln = 50 µm for (e-) electrons and Dp = 2 cm2s-1, Lp = 100 µm for holes.
Estimate the current flowing from the diode under the given bias conditions:
(a) V = -10V (b) V = 0.1V (c) V = 0.25V and (d) V = 0.5V.
Remember that current flow is because of diffusion of minority carriers. And following term:
VT = kT/q = 26mV @ 3000k, mn = 1.5 x 103 cm2 V-1 s-1 and ni = 1.5 x 1010 cm-3 as well as q = 1.6 x 10-19C