n-channel MOS transistors include the given properties:
Substrate Doping Concentration, NA= 2x1016 cm-3
Metal Fermi Potential, φFM = 0.6 V
Surface Impurity Concentration, Nox = 1010 cm-2
Permittivity of Silicon, εs = 10-12 Fcm-1
Permittivity of Silicon Dioxide, εox = 3.5x10-13 Fcm-1
Oxide Layer Thickness, tox = 50nm
Find out the threshold voltage, VT0, of the transistor along with no source-body bias when q = 1.6x10-19C and ni = 1.5 x 1010 as well as kT/q = 26 mV @ 300K.
Calculate the percentage change in the threshold voltage when the transistor is subjected to a source-to-body bias VSB = 1.0 Volt.